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Volumn 38, Issue 1, 2002, Pages 175-180

Localization of electrical-insulation-and partial-discharge failures of IGBT modules

Author keywords

Electrical insulation; Insulated gate bipolar transistor module; Phase resolved partial discharge

Indexed keywords

ELECTRIC INSULATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); METALLIZING; PARTIAL DISCHARGES; SILICONES; SPECTROSCOPIC ANALYSIS;

EID: 0036245360     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/28.980373     Document Type: Conference Paper
Times cited : (81)

References (15)
  • 5
    • 0009026033 scopus 로고    scopus 로고
    • Multichip high power IGBT-modules for traction and industrial application
    • (1997) Proc. EPE'97 , pp. 1255-1263
    • Sommer, K.H.1
  • 6
    • 0003327894 scopus 로고    scopus 로고
    • Insulation voltage test and partial discharge test of 3,3 kV IGBT-modules
    • (1997) Proc. PCIM'97 , pp. 652-661
    • Göttert, J.1
  • 11
    • 0029310020 scopus 로고
    • Simulation of partial-discharge processes and energy densities
    • (1995) ETEP , vol.5 , Issue.3 , pp. 157-163
    • Kurrat, M.1
  • 12
    • 0026488038 scopus 로고
    • Energy considerations for partial discharges in voids
    • (1992) ETEP , vol.2 , Issue.1 , pp. 39-44


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.