Correlation between interfacial structure and c-axis-orientationof LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 560-567

  Akazawa, H ^a   Shimada, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

A3. Sputtering; B1. Lithium compounds; B2. Opto electric materials

Indexed keywords

CRYSTALLINE MATERIALS; CRYSTALLIZATION; CYCLOTRONS; INTERFACES (MATERIALS); LITHIUM COMPOUNDS; NIOBIUM COMPOUNDS; OPTOELECTRONIC DEVICES; SILICA; SPUTTER DEPOSITION; TEMPERATURE CONTROL;

BULK CRYSTALS; INTERFACIAL STRUCTURES; RESONANCE PLASMA SPUTTERING; SUBSTRATE MATERIAL;

THIN FILMS;

EID: 4544277140     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.044     Document Type: Article

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