Position control of InAs quantum dots by AFM oxidation

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 237-239

  Ohashi, Ritsuo ^a   Ohtsuka, Tomohiko ^a   Ohta, Narihisa ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AFM based oxidation method; InAs; Nanostructure; Quantum dots

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOOXIDATION; PULSE GENERATORS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY;

NANOTEMPLATE SUBSTRATES; ROOT MEAN SQUARE (RMS) VALUES; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4544260045     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.117     Document Type: Article

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