Concentration and temperature-dependent low-field mobility model for in0.53Ga0.47As interdigitated lateral pin PD

IEICE Electronics Express

Volumn 5, Issue 9, 2008, Pages 303-309

  Menon, P S ^a   Kandiah, K ^a   Shaari, S ^a  

^a INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN   (Malaysia)

Author keywords

In0.53Ga0.47As; Interdigitated; Lateral; Mobility; P i n; Photodiode

Indexed keywords

(MO Y) DOPING; ANALYTIC FUNCTIONS; CONCENTRATION (COMPOSITION); LOW FIELD MOBILITY; TEMPERATURE DEPENDENT;

EID: 45249100669     PISSN: None     EISSN: 13492543     Source Type: Journal    
DOI: 10.1587/elex.5.303     Document Type: Article

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