Effect of well confinement on photoluminescence features from silicon nanoparticles embedded in an SiC/SiNx multilayered structure

Nanotechnology

Volumn 19, Issue 25, 2008, Pages

  Huang, Rao ^a   Ma, Libo ^a   Du, Yun ^a   Gao, Lei ^a   Li, Chaorong ^b   Yu, Cailan ^c   Ye, Jianping ^c   Cao, Zexian ^a  

^a INSTITUTE OF PHYSICS   (China)

^b ZHEJIANG SCI TECH UNIVERSITY   (China)

^c INSTITUTE OF CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMISSION; NANOPARTICLES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON;

AMORPHOUS SI; DOT STRUCTURES; QUANTUM WELLS; SILICON NANOPARTICLES (SI-NP);

AMORPHOUS SILICON;

NANOPARTICLE; SILICON CARBIDE; SILICON DERIVATIVE; SILICON NITRIDE;

ARTICLE; ENERGY TRANSFER; LIGHT; MATERIALS TESTING; NANOCHEMISTRY; NANOTECHNOLOGY; PHOTOLUMINESCENCE; PRIORITY JOURNAL; QUANTUM CHEMISTRY; ROOM TEMPERATURE;

EID: 45149130648     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/25/255402     Document Type: Article

References (22)

1. Kumar V 2008 Nanosilicon (Amsterdam: Elsevier) Available in 2007
2. Pavesi L and Lockwood D 2004 Silicon photonics Springer Topic in Applied Physics vol 94 (Berlin: Springer)
3. Nesheva D, Raptis C, Perakis A, Bineva I, Aneva Z, Levi Z, Alexandrova S and Hofmeister H 2002 J. Appl. Phys. 92 4678
4. Pavesi L, Dal Negro L, Mazzoleni C, FranzoÁ G and Priolo F 2000 Nature 408 440
5. Ledoux G, Gong J, Huisken F, Guillois O and Reynaud C 2002 Appl. Phys. Lett. 80 4834
6. Carrada M, Wellner A, Paillard V, Bonafos C, Coffin H and Claverie A 2005 Appl. Phys. Lett. 87 251911
7. Iacona F, Franzo G and Spinella C 2000 J. Appl. Phys. 87 1295
8. Terranova M L, Piccirillo S, Sessa V, Botti S and Rossi M 1999 Appl. Phys. Lett. 74 3146
9. Chen Z, Wang Y X, Zou Y M, Wang J W, Li Y and Zhang H J 2006 Appl. Phys. Lett. 89 141913
10. Liu C, Li C R, Ji A L, Ma L B, Wang Y Q and Cao Z X 2005 Nanotechnology 16 940
11. Wang Y Q, Wang Y G, Cao L and Cao Z X 2003 Appl. Phys. Lett. 83 3474
12. Liu C, Li C R, Ji A L, Ma L B, Wang Y Q and Cao Z X 2005 Appl. Phys. Lett. 86 223111
13. Huang R, Ma L B, Du Y, Song R, Ye J P, Lin Y, Wang Y Q and Cao Z X 2007 Nanotechnology 18 445605
14. Ma L B, Song R, Huang R, Du Y, Ye J P, Lin Y and Wang Y Q 2007 J. Lumin. 126 536
15. Sung G Y, Park N M, Shin J H, Kim K H, Kim T Y, Cho K S and Huh C 2006 IEEE J. Sel. Top. Quantum Electron. 12 1545
16. Nihonyanagi S, Nishimoto K and Kanemitsu Y 2002 J. Non-Cryst. Solids 299-302 1095
17. Choi W K 2001 Silicon Based Materials and Devices vol 1 ed H S Nalwa (New York: Academic)
18. Wang L, Zhao Y E, Zhao F L, Wu M M and Chen D H 2006 Thin Solid Films 496 566
19. Ma L B, Song R, Miao Y M, Li C R, Wang Y Q and Cao Z X 2006 Appl. Phys. Lett. 88 093102
20. Watanabe K, Tamaoka H, Fujii M and Hayashi S 2002 J. Appl. Phys. 92 4001
21. Priolo F, Franzó G, Pacifici D, Vinciguerra V, Iacona F and Irrera A 2001 J. Appl. Phys. 89 264
22. Tulkki J and Heinmäkäi A 1995 Phys. Rev. B 52 8239