Characteristics of surface-channel strained Si1-yCy n-MOSFETs

Materials Research Society Symposium - Proceedings

Volumn 533, Issue , 1998, Pages 43-48

  Rim, K ^a   Mitchell, T O ^a   Hoyt, J L ^a   Fountain, G ^a   Gibbons, J F ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TENSILE STRENGTH;

CAPACITANCE-VOLTAGE ANALYSIS;

MOSFET DEVICES;

EID: 0032304569     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-533-43     Document Type: Conference Paper

References (17)