Ion implantation of iodine into silicon carbide: Influence of temperature on the produced damage and on the diffusion behaviour

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 12-13, 2008, Pages 2810-2813

  Audren, A ^a   Benyagoub, A ^a   Thome, L ^b   Garrido, F ^b  

^a UNIVERSITÉ DE CAEN   (France)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Diffusion of impurities; Ion radiation effects; Radiation damage (amorphization); Recrystallization; Silicon carbide

Indexed keywords

DIFFUSION; FISSION PRODUCTS; GAS COOLED REACTORS; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; NUCLEAR FUELS; SILICON CARBIDE;

ATOMIC DISPLACEMENTS; RETENTION CAPABILITY;

IODINE;

EID: 44949249712     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.03.123     Document Type: Article

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