Correlation of electrical and optical properties with charge collection efficiency of In-doped and In+Si co-doped CdTe

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 591, Issue 1, 2008, Pages 200-202

  Belas, E ^a   Grill, R ^a   Franc, J ^a   Hlidek P ^a   Linhart, V ^b   Slavicek T ^b   Hoschl P ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

Annealing; CdTe:In; Defect compensation; Si doping

Indexed keywords

ELECTRIC PROPERTIES; INDIUM COMPOUNDS; OPTICAL PROPERTIES; SILICON COMPOUNDS;

CHARGE COLLECTION EFFICIENCY; DEFECT COMPENSATION; SI DOPING;

CADMIUM COMPOUNDS;

EID: 44649163392     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2008.03.056     Document Type: Article

References (8)

1. Panchuk O., et al. J. Cryst. Growth 197 (1999) 607
2. Gorlei P.N., Parfenyuk O.A., Ilashchuk M.I., and Nikolaevich I.V. Inorg. Mater. 41 (2005) 1266
3. Turkevich I., Grill R., Franc J., Hoschl P., Belas E., Moravec P., Fiederle M., and Benz K.W. Cryst. Res. Technol. 38 (2003) 288
4. Chibani L., Hage-Ali M., and Stoguert J.P. Mater. Sci. Eng. B 16 (1993) 202
5. Zielindska-Purgal R., Piwowarczyk J., and Nazarevich W. Phys. Stat. Sol. (b) 186 (1994) 355
6. Parfenyuk O.A., Ilashchuk M.I., Ulyanitski K.S., Fochuk P.M., Strilchuk O.M., Krylyuk S.G., and Korbutyak D.V. Semiconductors 40 2 (2006) 143
7. Belas E., Grill R., Franc J., Moravec P., Bok J., and Hoschl P. IEEE Trans. Nucl. Sci. 54 4 (2007) 786
8. Kuchař L., Drápala J., and Luňáček J. J. Cryst. Growth 161 (1996) 94