Preparation of semi-insulating CdTe:In by post-grown annealing after elimination of Te inclusions

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 786-791

  Belas, Eduard ^a   Grill, Roman ^a   Franc, Jan ^a   Moravec, Pavel ^a   Bok, J ^a   Höschl, Pavel ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

Author keywords

Annealing; CdTe; Diffusion; Inclusions; Precipitates

Indexed keywords

ANNEALING; DIFFUSION; PRECIPITATES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE DISTRIBUTION;

ANNEALING TEMPERATURE; SEMI-INSULATING MATERIAL;

CADMIUM ALLOYS;

EID: 34548087777     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.903165     Document Type: Conference Paper

References (16)

1. T. E. Schlesinger, J. E. Toney, H. Yoon, E. Y. Lee, B. A. Brunett, L. Franks, and R. B. James, "Cadmium, zinc telluride and its use as a nuclear radiation detector material," Mater. Sci Eng., vol. 32, pp. 103-189, 2001.
2. P. Rudolph, "Non-stoichiometry related defects at the melt growth of semiconductor compound crystals - A review," Cryst. Res. Technol., vol. 38, no. 7-8, pp. 542-554, 2003.
3. D. de Nobel, "Phase equilibria and semiconducting properties of cadmium telluride," Philips Res. Repts., vol. 14, pp. 361-399. 1959, 430-492.
4. E. Belas, R. Grill, A. L. Toth, P. Moravec, P. Horodyský, J. Franc, P. Höschl, H. Wolf, and T. Wichert, "Electrical and optical properties of in-doped CdTe after Cd-rich annealing," IEEE Trans. Nucl. Sci., vol. 52, no. 5, pp. 1932-1936, Oct. 2005.
5. E. Belas, J. Franc, R. Grill, A. L. Toth, P. Horodysky, P. Moravec, and P. Höschl, "Regular and anomalous type conversion of p-CdTe during Cd-rich annealing," J. Electr. Mater., vol. 6, pp. 957-962, 2005.
6. O. A. Matveev and A. I. Terentjev, "Self-compenzation in CdTe in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor," Semiconductors, vol. 32, no. 2, pp. 144-147, 1998.
7. M. Ayoub, M. Hage-Ali, A. Zumbiehl, R. Regal, J. M. Koebel, C. Rit, P. Fougeres, and P. Siffert, "Study of the resistivity mapping in CdTe:Cl-corelation with annealing and Te-precipitates," IEEE Trans. Nucl, Sci., vol. 49, no. 4, pp. 1954-1959, Aug. 2002.
8. R. Grill, J. Franc, P. Höschl, E. Belas, I. Turkevych, L. Turjanska, and P. Moravec, "Semiinsulating CdTe," Nucl. Instr. Method. A, vol. 487, pp. 40-46, 2002.
9. E. Watson and D. Shaw, "The solubility and diffusivity of In in CdTe," J. Phys. C: Solid State Phys., vol. 16, pp. 515-537, 1983.
10. E. Belas, M. Bugár, R. Grill, P. Horodyský, R. Fesh, J. Franc, P. Moravec, Z. Matěj, and P. Höschl, "Elimination of inclusions in (CdZn)Te substrates by post-grown annealing," J. Electmn. Mater., 2007, accepted for publication.
11. J. Shen, D. K. Aidun, L. Regel, and W. R. Wilcox, "Characterization of precipitates in CdTe and (CdZn)Te grown by vertical Bridgman-Stockbarger technique," J. Cryst. Growth, vol. 132, pp. 250-260, 1993.
12. R. Fang and R. F. Brebrick, "CdTe-I: Solidus curve and composition-temperature-tellurium partial pressure data for Te-rich CdTe(s) from optical density measurements," J. Phys. Chem. Solids, vol. 57, pp. 443-450, 1996.
13. R. Grill, L. Turjanska, J. Franc, E. Belas, I. Turkevych, and P. Höschl, "Chemical self-diffusion in CdTe," Phys. Stat. Sol. (b), vol. 221, no. 1, pp. 161-164, 2002.
14. R. Grill, J. Franc, P. Höschl, I. Turkevych, E. Belas, and P. Moravec, "Semi-insulating Te-saturated CdTe," IEEE Trans. Nucl, Sci., vol. 52, no. 5, pp. 1925-1931, Oct. 2005.
15. L. Kuchař, J. Drápala, and J. Luňáček, "Purification method of Cd, Te, CdTe and periodicity of segregation coefficients of admictures," J. Cryst. Growth, vol. 161, pp. 94-103, 1996.
16. K. Seeger, Semiconductor Physics. Wien, Austria: Springer-Verlag, 1973, p. 46.