Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in AlGaAsGaAs quantum well structures by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1100-1104

  Swe, N Chit ^a   Tangmattajittakul, O ^a   Suraprapapich, S ^a   Changmoang, P ^a   Thainoi, S ^a   Wissawinthanon, C ^a   Kanjanachuchai, S ^a   Ratanathammaphan, S ^a   Panyakeow, S ^a  

^a CHULALONGKORN UNIVERSITY   (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; QUANTUM CONFINEMENT; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE HETEROSTRUCTURE (DHS); QUANTUM DOT MOLECULES (QDM); QUANTUM WELL STRUCTURES; THIN-CAPPING-AND-REGROWTH PROCESS;

MOLECULAR STRUCTURE;

EID: 44649158210     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2835064     Document Type: Article

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