A Study to Determine an Effective Ground-Shield Structure for a Silicon On-Chip Spiral Inductor

Journal of Japan Institute of Electronics Packaging

Volumn 6, Issue 6, 2003, Pages 473-480

  Sugimoto, Yasuhiro ^a   Satoh, Shingo ^a  

^a CHUO UNIVERSITY   (Japan)

Author keywords

Electro Magnetic Field Simulation; Ground Shield; Quality Factor; Silicon Substrate; Spiral Inductor

Indexed keywords

EID: 4444370399     PISSN: 13439677     EISSN: 1884121X     Source Type: Journal    
DOI: 10.5104/jiep.6.473     Document Type: Article

References (6)

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3. C. P. Yue, and S. S. Wong: “A Study on Substrate Effects of Silicon-Based RF Passive Components”, IEEE MTT-S Digest, pp. 1625-1628, May, 1998.
4. K. Murata, T. Hosaka, and Y. Sugimoto: “Effect of a Ground Shield of a Silicon On-Chip Spiral Inductor”, Proceedings of 2000 APMC, pp. 177-180, Paper No. 215, December, 2000.
5. H. M. Greenhouse: “Design of Planar Rectangular Microelectronic Inductors”, IEEE Trans, on Part, Hybrids, and Packaging, Vol. 10, No. 2, pp. 101-109, June, 1974.
6. K. Kamogawa, K. Nishikawa, I. Yoyoda, T. Tokumitsu, and M. Tanaka: “A Novel High-Q and Wide-Frequency-Range Inductor Using Si 3-D MMIC Technology”, IEEE Microwave Guided Wave Lett., Vol. 9, pp. 16-18, Jan., 1999.