Epitaxial growth of sub-nanometre thick tin dioxide films on sapphire substrates by pulsed atomic layer chemical vapour deposition

Surface and Interface Analysis

Volumn 36, Issue 8, 2004, Pages 1133-1135

  Takeuchi, Toshio ^a   Doteshita, Isao ^a   Asami, Seiji ^a  

^a SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial growth; Sapphire substrate; Tin dioxide; XPS; XRD

Indexed keywords

SAPPHIRE SUBSTRATES; TIN DIOXIDE; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS); XRD;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; INERT GASES; PYROLYSIS; SAPPHIRE; SINGLE CRYSTALS; SPECTROPHOTOMETRY; THICK FILMS; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

TIN COMPOUNDS;

EID: 4444343682     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1858     Document Type: Conference Paper

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