Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures

Microelectronics Journal

Volumn 35, Issue 10, 2004, Pages 805-810

  Holzer, Stefan ^a   Minixhofer, Rainer ^b   Heitzinger, Clemens ^a   Fellner, Johannes ^b   Grasser, Tibor ^a   Selberherr, Siegfried ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b AMS AG   (Austria)

Author keywords

Electro thermal simulation; Parameter extraction; Polycrystalline silicon; Polyfuse; Polysilicon

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC POWER SYSTEM INTERCONNECTION; FINITE ELEMENT METHOD; PARAMETER ESTIMATION; POLYSILICON; THERMAL CONDUCTIVITY;

ELECTRO-THERMAL SIMULATION; FUSING STRUCTURE; PARAMETER EXTRACTION; POLYFUSE;

MATERIALS SCIENCE;

EID: 4444335480     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.06.011     Document Type: Conference Paper

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