Oxygen-mediated Mn diffusion in magnetic tunnel junctions comprising a nano-oxide layer

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2278-2280

  Boeve, Hans ^a   Vanhelmont, Frederik ^a   Zalm, Peer C ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Magnetic tunnel junction (MTJ); Magnetoresistive random access memories (MRAMs); Nano oxide layer (NOL); Temperature stability

Indexed keywords

ANNEALING; ANTIFERROELECTRIC MATERIALS; DIFFUSION; GRAIN GROWTH; MAGNETORESISTANCE; MANGANESE; NANOTECHNOLOGY; OXYGEN; RANDOM ACCESS STORAGE; THERMODYNAMIC STABILITY;

MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETORESISTIVE RANDOM ACCESS MEMORIES (MRAMS); NANO-OXIDE LAYER (NOL); TEMPERATURE STABILITY;

TUNNEL JUNCTIONS;

EID: 4444324138     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.830433     Document Type: Article

References (8)

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