Large magnetoresistance at high bias voltage in double magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2287-2289

  Colis, Silviu ^a,b   Gieres, Günter ^a   Dimopoulos, Theodores ^a   Bär, Ludwig ^a   Wecker, Joachim ^a  

^a SIEMENS AG   (Germany)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

Bias dependence; Double tunnel junction; Tunnel magnetoresistance (TMR)

Indexed keywords

ANISOTROPY; BAND STRUCTURE; COERCIVE FORCE; ELECTRIC RESISTANCE; ELECTRODES; FERROMAGNETIC MATERIALS; LITHOGRAPHY; MAGNETIZATION; MAGNETORESISTANCE; MAGNETRON SPUTTERING;

BIAS DEPENDENCE; DOUBLE TUNNEL JUNCTIONS; MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNEL MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 4444322820     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.830426     Document Type: Article

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