Bulk damage in DMILL npn bipolar transistors caused by thermal neutrons versus protons and fast neutrons

IEEE Transactions on Nuclear Science

Volumn 51, Issue 4 I, 2004, Pages 1752-1758

  Mandić, Igor ^a   Cindro, Vladimir ^a   Kramberger, Gregor ^a   Krištof, Edvard S ^a   Mikuž, Marko ^a   Vrtačnik, Danilo ^b   Ullan, Miguel ^c,d   Anghinolfi, Francis ^e  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^d UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

^e CERN   (Switzerland)

Author keywords

Bipolar transistor; Radiation damage; Thermal neutrons

Indexed keywords

BULK DAMAGE EFFECTS; GAIN DEGRADATION; THERMAL NEUTRONS;

ANNEALING; BIPOLAR TRANSISTORS; DOPING (ADDITIVES); ENERGY DISSIPATION; IONIZATION; NEUTRON IRRADIATION; PROTON IRRADIATION;

RADIATION DAMAGE;

EID: 4444282098     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.832927     Document Type: Conference Paper

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