Key factors to enhance the switching characteristics in submicron MRAM cells

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2616-2618

  Kim, H J ^a   Lee, J E ^a   Baek, I G ^a   Ha, Y K ^a   Bae, J S ^a   Oh, S C ^a   Park, S O ^a   Chung, U In ^a   Lee, N I ^a   Kang, H K ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Magnetic random access memory (MRAM); Magnetic tunnel junction (MTJ); Switching field distribution (SFD)

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; FERROMAGNETIC MATERIALS; FLASH MEMORY; MAGNETIC FILMS; MAGNETIC MATERIALS; MAGNETIZATION; SWITCHING; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTION (MTJ); SWITCHING FIELD DISTRIBUTION (SFD);

RANDOM ACCESS STORAGE;

EID: 4444275755     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.829813     Document Type: Article

References (9)

1. M. Durlam et al., "A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects," IEEE. J. Solid-State Circuits, vol. 38, pp. 769-773, May 2003.
2. S. Tehrani et al., "Magnetoresistive random access memory using magnetic tunnel junctions," Proc. IEEE, vol. 91, pp. 703-714, May 2003.
3. A. R. Sitaram et al., "A 0.18 μm logic-based MRAM technology for high performance nonvolatile memory applications," in Proc. VLSI Conf., 2003.
4. H. S. Jeong et al., "Fully integrated 64 Kb MRAM with novel reference cell scheme," in Proc. IEDM Conf., 2002.
5. K. J. Lee, W. Park, and T. Kim, "Kink-free design of submicrometer MRAM cell," IEEE. Trans. Magn., vol. 39, pp. 2842-2844, Sept. 2003.
6. D. Meyners, H. Bruckl, and G. Reiss, "Influence of boundary roughness on the magnetization reversal in submicron sized magnetic tunnel junctions," J. Appl. Phys., vol. 93, p. 2676, 2003.
7. N. Tezuka, E. Kitagawa, K. Inomata, S. Sugimoto, N. Kikuchi, and Y. Shimada, "Switching field behavior in antiparallely coupled sub-micrometer scale magnetic elements," J. Magn. Magn. Mater., vol. 240, p. 294, 2002.
8. J. Janesky, N. D. Rizzo, B. N. Engel, J. M. Slaughter, and S. Tehrani, "The switching characteristics of sub-micron memory elements with synthetic anti-ferromagnetic (SAF) free-layers," Proc. InterMag Conf., 2003.
9. I. G. Baek, J. E. Lee, H.-J. Kim, Y. K. Ha, J. S. Bae, S. C. Oh, S. O. Park, U.-I. Chung, N. I. Lee, H. K. Kang, and J. T. Moon, "MRAM with lamellar structure as free layer," in Proc. IEDM Conf., 2003.