A 240 W doherty GaAs power FET amplifier with high efficiency and low distortion for W-CDMA base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2004, Pages 525-528

  Takenaka, I ^a   Takahashi, H ^a   Ishikura, K ^a   Hasegawa, K ^b   Asano, K ^b   Kanamori, M ^a  

^a NEC CORPORATION   (Japan)

^b NONE   (Japan)

Author keywords

Distortion; Doherty configuration; Efficiency; Heterojunction fets; High power amplifiers; W CDMA

Indexed keywords

DOHERTY CONFIGURATION; HETEROJUNCTION FETS; HIGH POWER AMPLIFIERS; SIGNAL SIMULATION;

CODE DIVISION MULTIPLE ACCESS; ELECTRIC DISTORTION; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRIC TRANSFORMERS; ENERGY EFFICIENCY; HETEROJUNCTIONS; MATHEMATICAL MODELS; NATURAL FREQUENCIES; POWER AMPLIFIERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4444253206     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. W. H. Doherty, " A New High Efficiency Power Amplifier for Modulated Waves," Proc. IRE, Vol.24, No9, pp. 1163-1182, 1936.
2. S. C. Cripps, RF Power Amplifiers for Wireless Communications, Boston: Artech House, 1998, pp. 225-239.
3. Y. Yang, J. Yi, Y.Y. Woo, and B. Kim, "Experimental Investigation on Efficiency and Linearity of Microwave Doherty Amplifier," 2001 IEEE MTT-S Int. Microwave Symp. Dig., Vol. 2, pp.1367-1370.
4. S. M. Simon, R. S. Pengelly, and M. Suto, "A High Power, high Efficiency UMTS Amplifier using a Novel Doherty Configuration," in Proc. RAWCON, 2003, pp. 329-332.
5. I. Takenaka, et al, "A 240W Power Heterojunction FET with High Efficiency for W-CDMA Base Stations," 2001 IEEE MTT-S Int. Microwave Symp. Dig., pp.645-648.
6. C. Dragon, W. Brakensiek, D. Burdeaux, W. Burger, G. Funk, M. Hurst, and D. Rice, "200W Push-Pull & HOW Single-Ended High Performance RF-LDMOS Transistors for W-CDMA Basestation Applications," 2003 IEEE MTTSlnt. Microwave Symp. Dig., pp.69-72.
7. K. Inoue, K. Ebihara, H. Haematsu, T. Igarashi, H. Takahashi and J. Fukaya, "A 240W Push-Pull GaAs Power FET for W-CDMA Base Stations", 2000 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1719-1722.
8. K. Ebihara, K. Inoue, H. Haematsu, F. Yamaki, H. Takahashi and J. Fukaya, "An Ultra Broad Band 300W GaAs Power FET for W-CDMA Base Stations", 2001 IEEE MTT-S Int. Microwave Symp. Dig., pp. 649-652.