Tunnel junctions with yttrium oxide barrier and various ferromagnetic electrodes

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2296-2298

  Dimopoulos, Theodores ^a   Gieres, Günter ^a   Colis, Silviu ^b   Lopez, Ricardo ^a   Vieth, Michael ^a   Wecker, Joachim ^a   Luo, Yuausu ^c   Samwer, Konrad ^c  

^a SIEMENS AG   (Germany)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^c UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Magnetic memories; Magnetic sensors; Magnetic thin film devices; Tunneling

Indexed keywords

ANNEALING; COBALT ALLOYS; ELECTRODES; FERROMAGNETIC MATERIALS; MAGNETORESISTANCE; OXIDATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILM DEVICES; YTTRIUM COMPOUNDS;

MAGNETIC MEMORIES; MAGNETIC SENSORS; MAGNETIC THIN-FILM DEVICES; TUNNEL MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 4444221761     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.829282     Document Type: Article

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