Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities

Microelectronics Journal

Volumn 39, Issue 6, 2008, Pages 857-867

  Milady, S ^a   Silber, D ^a   Niedernostheide, F J ^b   Felsl, H P ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Current filaments; Filament velocity; Power diode; Reverse recovery; Safe operating area; Thermal boundary conditions

Indexed keywords

AVALANCHE DIODES; BOUNDARY CONDITIONS; CHARGE CARRIERS; COMPUTER SIMULATION; DOPING (ADDITIVES);

CURRENT FILAMENTS; FILAMENT VELOCITY; POWER DIODES; REVERSE RECOVERY; SAFE OPERATING AREA; THERMAL BOUNDARY CONDITIONS;

ELECTRIC CURRENTS;

EID: 44249098279     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.11.004     Document Type: Article

References (14)

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