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Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

Indentation effects on atommanipulation on Si(111) surfaces investigated by STM

(3) Hasunuma, R a Komeda, T a Tokumoto, H b

a JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

b NATL INST FOR ADV INTERDISC RES (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT AREAS; CONTACT POTENTIAL; CONTACT SIZE; INDENTATION EFFECTS; NEGATIVE SAMPLE BIAS; P-TYPE; P-TYPE SUBSTRATES; QUANTIZED CONDUCTANCE; SAMPLE BIAS; SCANNING TUNNELING MICROSCOPES; SI (1 1 1); SI ATOMS;

ADATOMS; ATOMS; ELECTRIC FIELDS; ELECTRIC RECTIFIERS; QUANTUM ELECTRONICS; SILICON; SUBSTRATES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 44249093406 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s003390051223 Document Type: Article

Times cited : (3)

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