Optical and electrical characterization of poly(3-hexylthiophene-2,5-diyl) interface with Al and LiF

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 2, 2008, Pages 1251-1255

  Singh, Vipul ^a   Thakur, Anil K ^a   Pandey, Shyam S ^a   Takashima, Wataru ^a   Kaneto, Keiichi ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Depletion layer; Interface; Photo induced memory; Photoluminescence; Poly(3 hexylthiophene)

Indexed keywords

ALUMINA; CARRIER MOBILITY; LIGHT EMISSION; LITHIUM; LUMINESCENCE; PHOTOLUMINESCENCE; QUENCHING;

BENDING; CARRIER DIFFUSIONS; DEPLETION LAYER; DEPLETION LAYERS; INSULATING BARRIERS; INTERFACE; LITHIUM FLUORIDES; MEMORY EFFECTS; OPTICAL AND ELECTRICAL CHARACTERIZATIONS; P3HT FILMS; PHOTO INDUCED; PHOTO-INDUCED MEMORY; POLY(3-HEXYLTHIOPHENE); QUALITATIVE;

ALUMINUM;

EID: 44149091399     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1251     Document Type: Article

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