Investigation of the Schottky junction at poly(3-alkylthiophene) and metal interface

Synthetic Metals

Volumn 137, Issue 1-3, 2003, Pages 1421-1422

  Rikitake, K ^a   Tanimura, D ^a   Takashima, W ^a   Kaneto, K ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Depletion layer; Photocurrent; Poly(3 alkylthiophene); Schottky junction; Temperature dependence

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); PHOTOCURRENTS; SPIN COATING;

SCHOTTKY JUNCTIONS;

ORGANIC COMPOUNDS;

EID: 0037419401     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(02)01160-8     Document Type: Conference Paper

References (3)

1. K. Kaneto, K. Takayama, W. Takashima, T. Endo and M. Rikukawa: Jpn. J. Appl. Phys. 41 (2002) 675.
2. S. S. Pandey, S. Nagamatsu, W. Takashima and K. Kaneto: Jpn. J. Appl. Phys. 39 (2000) 6309.
3. Musa and W. Eccleston: Jpn. J. Appl. Phys. 37 (1998) 428.