High etch selectivity for plasma etching SiO2 with AlN and Al2O3 masks

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 985-987

  Kolari, K ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

Aluminium nitride; Aluminium oxide; Glass; Plasma etching; Selectivity

Indexed keywords

ALUMINUM COMPOUNDS; BIAS CURRENTS; GLASS; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING;

ALUMINIUM NITRIDE; ALUMINIUM OXIDE;

SILICON COMPOUNDS;

EID: 44149084035     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.12.037     Document Type: Article

References (6)

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5. K. Kolari, In: 33rd International Conference on Micro- and Nano-Engineering, Copenhagen, Denmark (2007) 23-26.
6. Kolari K. Sensors and Actuators A 141 2 (2008) 677-684