Single-pulse excimer laser nanostructuring of silicon: A heat transfer problem and surface morphology

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Eizenkop, Julia ^a   Avrutsky, Ivan ^a   Georgiev, Daniel G ^b   Chaudchary, Vipin ^c  

^a Wayne State University   (United States)

^b The University of Toledo   (United States)

^c the State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HEAT TRANSFER; LASER BEAM EFFECTS; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; SINGLE CRYSTALS; SURFACE MORPHOLOGY;

EXCIMER LASER NANOSTRUCTURING; IRRADIATION CONDITIONS; RESOLIDIFICATION CONDITION; SINGLE-PULSE IRRADIATION;

EXCIMER LASERS;

EID: 43949113663     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2910196     Document Type: Article

References (19)

1. A. J. Pedraza, J. D. Fowlkes, and D. H. Lowndes, Appl. Phys. Lett. 0003-6951 10.1063/1.123838 74, 2322 (1999).
2. A. J. Pedraza, J. D. Fowlkers, and Y. F. Guan, Appl. Phys. A: Mater. Sci. Process. 77, 277 (2003).
3. Y. F. Tang, S. R. P. Silva, B. O. Boskovic, and J. M. Shannon, Appl. Phys. Lett. 0003-6951 10.1063/1.1482141 80, 4154 (2002).
4. F. Sánchez, J. L. Morenza, R. Aguiar, J. C. Delgado, and M. Varela, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s003390050641 66, 83 (1998).
5. T. H. Her, R. J. Finlay, C. Wu, S. Deliwala, and E. Mazur, Appl. Phys. Lett. 0003-6951 10.1063/1.122241 73, 1673 (1998).
6. A. A. Evtukh, E. B. Kaganovich, V. G. Litovchenko, Yu. M. Litvin, D. V. Fedin, E. G. Manoilov, and S. V. Svechnikov, Semicond. Phys., Quantum Electron. Optoelectron. 3, 474 (2000).
7. T. Schwarz-Selinger, D. G. Cahill, S. C. Chen, S. G. Moon, and C. P. Grigoropoulos, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64.155323 64, 155323 (2001).
8. G. Wysocki, R. Denk, K. Piglmayer, N. Arnold, and D. Bäuerle, Appl. Phys. Lett. 0003-6951 10.1063/1.1538347 82, 692 (2003).
9. D. G. Georgiev, R. J. Baird, I. Avrutsky, G. Auner, and G. Newaz, Appl. Phys. Lett. 0003-6951 10.1063/1.1762978 84, 4881 (2004).
10. S. Theppakuttai, Y. Lu and S. Chen, Trans. NAMRI/SME 32 (2004).
11. T. Chiba, R. Komura, and A. Mori, Jpn. J. Appl. Phys., Part 1 39, 4803 (2000).
12. J. Eizenkop, I. Avrutsky, G. Auner, D. Georgiev, and V. Chaudhary, J. Appl. Phys. 0021-8979 10.1063/1.2720185 101, 094301 (2007).
13. A. E. Bell, RCA Rev. 40, 295 (1979).
14. R. F. Wood and G. E. Giles, Phys. Rev. B 0163-1829 10.1103/PhysRevB.23. 2923 23, 2923 (1981).
15. V. A. Pilipovich, V. L. Malevich, G. D. Ivlev, and V. V. Zhidkov, J. Eng. Phys. 0022-0841 10.1007/BF00871878 48, 228 (1985).
16. N. M. Bulgakova, A. V. Bulgakov, and L. P. Babich, Appl. Phys. A: Mater. Sci. Process. 79, 1323 (2004).
17. P. Bouchut, D. Decruppe, and L. Delrive, J. Appl. Phys. 0021-8979 10.1063/1.1776629 96, 3221 (2004).
18. R. Hull, Properties of Crystalline Silicon, EMIS Datareviews Series (EMIS, Stevenage, UK, 1999), Chap..
19. B. J. Kent, K. L. Alpin, L. Wang, S. E. Huq, R. Stevens, A. Malik, and D. Nicolini, Class. Quantum Grav. 0264-9381 10.1088/0264-9381/22/10/047 22, S483 (2005).