Scaling three-dimensional SOI integrated-circuit technology

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2007, Pages 87-88

  Chen, C K ^a   Warner, K ^a   Yost, D R W ^a   Knecht, J M ^a   Suntharalingam, V ^a   Chen, C L ^a   Burns, J A ^a   Keast, C L ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43549124303     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2007.4357865     Document Type: Conference Paper

References (5)

1. J.A. Burns, B.F. Aull, C.K. Chen, C.L, Chen, C.L. Keast, J.M. Knecht, V. Suntharalingam, K. Warner, P.W. Wyatt, and D.R.W. Yost, IEEE Trans. Electron Devices, vol. 53, p.2507, October 2006.
2. V.Suntharalingam, R. Berger, J.A. Burns, C.K. Chen, C.L. Keast, J.M. Knecht, R.D. Lambert, K.L. Newcomb, D.M. O'Mara, D.D. Rathrnan, D.C Shaver, A.M. Soares, C.N. Stevenson, B.M. Tyrrell, K. Warner, B.D. Wheeler, D.R.W. Yost, and D.J. Young, Proc. Papers IEEE Int. Solid-State Circuits Conf. Tech. Deg., 2005, p356.
3. K. Warner, J. Burns, C. Keast, R. Kunz, D. Lennon, A. Loomis, W. Mowers, and D. Yost. Proc. IEEE Int. SOI Conf., 2002, p. 123.
4. K. Warner, D. Oakley, J. Donnelly, C. Keast, and D. Shaver, Proc. Int. Conf. on Indium Phosphide and Related Materials, 2006, p.226.
5. K. Warner, C. Chen, R. D'Onofrio, C. Keast, and S. Poesse, Proc. IEEE Int. SOI Conf., 2004, p. 71.