90 nm lithography process characterization using ODP scatterometry technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 597-604

  Ke, Chih Ming ^a   Yu, Shinn Sheng ^a   Wang, Yu Hsi ^a   Chou, Yu Jun ^a   Chen, Jeng Horng ^a   Lee, Bih Huey ^a   Chu, Hong Yuan ^a   Lin, Hua Tai ^a   Gau, Tsai Sheng ^a   Lin, Chih Hsiang ^a   Ku, Yao Ching ^a   Lin, Burn J ^a   Huang, Jacky ^b   Hsu, J J ^b   Liu, Victor ^b   Hetzer, Dave ^b   Yap, Lip ^b   Yang, Wenge ^b   Kaoru, Araki ^c  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b Timbre Technologies Inc   (United States)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

CD uniformity; CD SEM; ODP; Optical CD; Scatterometry

Indexed keywords

OPTICAL DIGITAL PROFILOMETRY (ODP); PHOTORESIST THICKNESS; SCATTEROMETRY;

DEPOSITION; PHOTORESISTORS; SCANNING ELECTRON MICROSCOPY; SCATTERING; THICKNESS MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

LITHOGRAPHY;

EID: 4344703198     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536123     Document Type: Conference Paper

References (6)

1. Semiconductor Industry Association, "International Technology Roadmap for Semiconductors, 2000 Update", 2000.
2. Chih-Ming Ke et al, "The Effect of Various ArF Resist Shrinkage Amplitude on CD Bias", Proceeding of SPIE, Vol. 4689 Metrology, Inspection, and Process Control for Microlithography XVI, March 2002, p. 92.
3. J. Baliga, "Advanced Process Control: Soon to be A Must," Semiconductor International, July 1999, p.76.
4. X. Niu, N. Jakatdar, J. Bao, and C. J. Spanos, "Specular Spectroscopic Scatterometry," IEEE Transactions on Semiconductor Manufacturing, vol. 14, No. 2, May 2001, pp. 97-111.
5. K. R. Lensing, R. J. Markle, B. Stirton, M. A. Laughery, "Shallow Trench Isolation Scatterometry Metrology in a High Volume Fab," Proceeding of International Symposium on Semiconductor Manufacturing, October 2001.
6. Chih-Ming Ke et al, "Quantification of CD SEM Wafer Global Charging Effect on CD and CD Uniformity of 193 nm Lithography" SPIE 2004 5375-18.