Fabrication and characterization of a sensing device based on porous silicon

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 473-477

  Quercia, L ^a   Cerullo, F ^a   La Ferrara, V ^a   Di Francia, G ^a   Baratto, C ^b   Faglia, G ^b  

^a ENEA CR Portici   (Italy)

^b UNIVERSITY OF BRESCIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROCHEMISTRY; ETCHING; FABRICATION; LEAKAGE (FLUID); LIGHT EMITTING DIODES; NITROGEN OXIDES; OXYGEN; OXYGEN SENSORS; PHOTOLUMINESCENCE; SILICON WAFERS;

AIR LEAKS; ELECTROCHEMICAL ANODIZATION; GAS SENSOR CALIBRATION APPARATUS; PHOTOLUMINESCENCE QUENCHING;

POROUS SILICON;

EID: 0034427625     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<473::AID-PSSA473>3.0.CO;2-K     Document Type: Article

References (8)

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