Nitrogen doping and p type conductivity of ZnO films grown by vapor phase epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5359, Issue , 2004, Pages 279-283

  Rommeluere J F ^a   Svob, L ^a   Mimila Arroyo, J ^a,b   Hassani, S ^a   Jomard, F ^a   Amiri, G ^a   Lusson, A ^a   Sallet, V ^a   Galtier, P ^a   Marfaing, Y ^a  

^a CNRS   (France)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

MOVPE; p type doping; Zinc Oxyde

Indexed keywords

CHEMICAL VAPOR TRANSPORT (CVT); CLOSE SPACE VAPOR TRANSPORT (CSVT); P-TYPE DOPING; ZINC OXYDE;

ANNEALING; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; DECOMPOSITION; DOPING (ADDITIVES); ELECTRIC CHARGE; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; YIELD STRESS;

ZINC OXIDE;

EID: 4344663312     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.517233     Document Type: Conference Paper

References (5)

1. C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000)
2. A. Zunger, Appl. Phys. Lett., 83, 57 (2003)
3. D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).
4. V. Sallet, J. F. Rommeluère, A. Lusson, A. Rivière, S. Fusil, O. Gorochov, and R. Triboulet, Phys. Status Solidi B 229, 903 (2002).
5. Y.Ma, G.T. Du, T.P. Yang, D.L. Qiu, X. Zhang, H.J. Yang, Y.T. Zhang, B.J. Zhao, X.T. Yang, D.L. Liu, J. Crystal Growth 255, 303 (2003).