Linewidth measurement simulations for semiconductor circuits by scatterometry using the FDTD and the time shortening calculation method

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 2, 2004, Pages 1331-1338

  Shirasaki, Hirokimi ^a   Ueta, Kunio ^b  

^a TAMAGAWA UNIVERSITY   (Japan)

^b DAINIPPON SCREEN MFG CO LTD   (Japan)

Author keywords

FDTD method; Linewidth measurements; Oblique incidence; Scatterometry; Semiconductor; Silicon; Trench

Indexed keywords

FINITE-DIFFERENCE TIME-DOMAIN (FDTD) METHOD; LINEWIDTH MEASUREMENTS; OBLIQUE INCIDENCE; SCATTEROMETRY; TRENCH;

ELLIPSOMETRY; FINITE DIFFERENCE METHOD; LIGHT REFLECTION; LIGHT SCATTERING; SEMICONDUCTOR DEVICES; TIME DOMAIN ANALYSIS;

PHOTOLITHOGRAPHY;

EID: 4344628064     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533571     Document Type: Conference Paper

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