Shape measurement simulation for the silicon trench array by scattering properties and continuous wavelet analysis with interference spectroscopy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4689 II, Issue , 2002, Pages 688-695

  Shirasaki, Hirokimi ^a  

^a TAMAGAWA UNIVERSITY   (Japan)

Author keywords

BEM method; FDTD method; Interference spectroscopy; Semiconductor; Trench; Wavelet analysis

Indexed keywords

BOUNDARY ELEMENT METHOD; COMPUTER SIMULATION; DISPERSION (WAVES); FINITE DIFFERENCE METHOD; LIGHT POLARIZATION; LIGHT VELOCITY; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TIME DOMAIN ANALYSIS; WAVELET TRANSFORMS;

INTERFERENCE SPECTROSCOPY; SILICON TRENCH ARRAYS;

LIGHT SCATTERING;

EID: 0036029341     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.473511     Document Type: Conference Paper

References (10)

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