Resist and silicon trench array linewidth measurement simulations for the next-generation semiconductor circuits by optical scattering properties using the FDTD method

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5038 II, Issue , 2003, Pages 748-756

  Shirasaki, Hirokimi ^a   Ueta, Kunio ^b   Kondou, Noriyuki ^b  

^a TAMAGAWA UNIVERSITY   (Japan)

^b DAINIPPON SCREEN MFG CO LTD   (Japan)

Author keywords

FDTD method; Lithography; Resist; Scatterometry; Silicon; Trench

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; FINITE DIFFERENCE METHOD; INTEGRATION; MAGNETIC FIELD EFFECTS; MAXWELL EQUATIONS; NUMERICAL ANALYSIS; PERMITTIVITY; PHOTORESISTS; SEMICONDUCTING SILICON; TIME DOMAIN ANALYSIS;

GAUSSIAN BEAMS; MAGNETIC CURRENTS; NEXT GENERATION SEMICONDUCTOR CIRCUITS; OPTICAL SCATTERING PROPERTIES; SCATTEROMETRY; SILICON TRENCH ARRAY LINEWIDTH MEASUREMENT;

LITHOGRAPHY;

EID: 0141723615     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.482643     Document Type: Conference Paper

References (9)

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