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Volumn 462-463, Issue SPEC. ISS., 2004, Pages 321-324
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Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnects
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Author keywords
Cu interconnects; Damascene; Intra level dielectric leakage; Surface treatment; TDDB
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Indexed keywords
INTERMETAL DIELECTRIC (IMD);
TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);
UNDOPED SILICATE GLASS (USG);
CAPACITORS;
DIELECTRIC MATERIALS;
DOPING (ADDITIVES);
LEAKAGE CURRENTS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REDUCTION;
SURFACE TREATMENT;
COPPER;
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EID: 4344627599
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2004.05.093 Document Type: Article |
Times cited : (6)
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References (6)
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