Measurement precision of CD-SEM for 65 nm technology node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 2, 2004, Pages 929-939

  Abe, Hideaki ^a   Motoki, Hiroshi ^a   Ikeda, Takahiro ^a   Yamazaki, Yuichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CD SEM; Long term variation; Measurement precision; Short term repeatability; Tool matching

Indexed keywords

CRITICAL DIMENSION (CD); LONG-TERM VARIATION; MEASUREMENT PRECISION; SHORT-TERM REPEATABILITY; TOOL MATCHING;

ALGORITHMS; ERROR ANALYSIS; IMAGE QUALITY; MEASUREMENT THEORY; SEMICONDUCTOR DEVICES; SIGNAL TO NOISE RATIO; SILICON WAFERS;

SCANNING ELECTRON MICROSCOPY;

EID: 4344626408     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534910     Document Type: Conference Paper

References (4)

1. International Technology Roadmap for Semiconductors, (2003 EDITION), Table 117a.
2. B. D. Bunday, and M. Bishop, "Specifications and Methodologies for Benchmarking of Advanced CDSEMs at the 90nm CMOS Technology Node and Beyond", Proc. SPIE 5038, pp. 1038-1052 (2004).
3. J. S. Villarrubia, A. E. Vladár, and M. T. Postek, "A Simulation Study of Repeatability and Bias in the CD-SEM", Proc. SPIE 5038, pp. 138-149 (2004).
4. N. R. Draper, and H. Smith, Applied Regression Analysis, Chapl, John Wiley & Sons, Inc., (1996)