Electrical transport properties of ReS2 and ReSe2 layered crystals

Solid State Communications

Volumn 111, Issue 11, 1999, Pages 635-640

  Tiong, K K ^a   Ho, C H ^b   Huang, Y S ^b  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; RHENIUM COMPOUNDS; SINGLE CRYSTALS; TEMPERATURE MEASUREMENT; THERMAL CONDUCTIVITY OF SOLIDS; VAN DER WAALS FORCES;

ELECTRON-PHONON INTERACTIONS;

SEMICONDUCTOR MATERIALS;

EID: 0032674804     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00240-9     Document Type: Article

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