-
1
-
-
4344580023
-
Fabrication of a dual-wavelength visible light laser diode cascaded by tunnel junction
-
Chinese source
-
LI Jian-jun, SHEN Guang-di, GUO Wei-ling, et al. Fabrication of a dual-wavelength visible light laser diode cascaded by tunnel junction[J]. J of Optoelectronics · Laser, 2003, 14(9): 901-904. (in Chinese)
-
(2003)
J. of Optoelectronics · Laser
, vol.14
, Issue.9
, pp. 901-904
-
-
Li, J.-J.1
Shen, G.-D.2
Guo, W.-L.3
-
2
-
-
1642402861
-
Novel semiconductor laser with dual-wavelength cascaded by tunnel junction
-
Chinese source
-
LI Jian-jun, SHEN Guang-di, GUO Wei-ling, et al. Novel semiconductor laser with dual-wavelength cascaded by tunnel junction[J]. Chinese Journal of Lasers, 2003, 30(11): 961-964. (in Chinese)
-
(2003)
Chinese Journal of Lasers
, vol.30
, Issue.11
, pp. 961-964
-
-
Li, J.-J.1
Shen, G.-D.2
Guo, W.-L.3
-
3
-
-
0347608383
-
Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers
-
Lu Tien-chang, Fu Richard, Shieh H M, et al. Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers[J]. Applied Physics Letters, 2001, 78(7): 853-855.
-
(2001)
Applied Physics Letters
, vol.78
, Issue.7
, pp. 853-855
-
-
Lu, T.-C.1
Fu, R.2
Shieh, H.M.3
-
4
-
-
4344711027
-
The measurement and study of the optical and thermal characteristics of laser diode by electrical method
-
Chinese source, Beijing: Beijing University of Technology
-
Feng Shiwei. The Measurement and study of the optical and thermal characteristics of laser diode by electrical method[D]. Beijing: Beijing University of Technology, 1998. 6-7. (in Chinese)
-
(1998)
, pp. 6-7
-
-
Feng, S.1
-
5
-
-
0016645997
-
Temperature distributions in the GaAs-AlGaAs double-heterostructure laser below and above the threshold current
-
Kobayashi T, Furukawa J. Temperature distributions in the GaAs-AlGaAs double-heterostructure laser below and above the threshold current[J]. Jpn J Appl Phys, 1975, 14(12): 1981-1986.
-
(1975)
Jpn. J. Appl. Phys.
, vol.14
, Issue.12
, pp. 1981-1986
-
-
Kobayashi, T.1
Furukawa, J.2
-
6
-
-
0029378998
-
Transient temperature response of vertical-cavity surface-emitting semiconductor lasers
-
Zhao Y G, Mclnerney J G. Transient temperature response of vertical-cavity surface-emitting semiconductor lasers[J]. IEEE J of Q E, 1995, 31(9): 1668-1673.
-
(1995)
IEEE J. of Q E
, vol.31
, Issue.9
, pp. 1668-1673
-
-
Zhao, Y.G.1
Mclnerney, J.G.2
-
7
-
-
0024665347
-
Transient thermal effects calculation in InP/InGaAsP stripe geometry semiconductor laser diode
-
Chinese source
-
Zhang Xiaobo, Gao Dingsan. Transient thermal effects calculation in InP/InGaAsP stripe geometry semiconductor laser diode[J]. Chinese J Semiconductors, 1989, 10(5): 362-367. (in Chinese)
-
(1989)
Chinese J. Semiconductors
, vol.10
, Issue.5
, pp. 362-367
-
-
Zhang, X.1
Gao, D.2
-
8
-
-
0011962988
-
Simulation of heterojunction bipolar transistors
-
Vienna: Vienna University of Technology
-
Palankovski V. Simulation of Heterojunction Bipolar Transistors[D]. Vienna: Vienna University of Technology, 2000.
-
(2000)
-
-
Palankovski, V.1
|