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Volumn 15, Issue 6, 2004, Pages 649-653

Thermal characteristic simulation of dual-wavelength laser diode cascaded by tunnel junction

Author keywords

Dual wavelength; Finite element method; Semiconductor laser diode (LD); Thermal characteristic; Tunnel junction

Indexed keywords

FINITE ELEMENT METHOD; THERMAL CONDUCTIVITY; THERMODYNAMIC PROPERTIES; TUNNEL JUNCTIONS;

EID: 4344618161     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (10)

References (8)
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    • (2003) J. of Optoelectronics · Laser , vol.14 , Issue.9 , pp. 901-904
    • Li, J.-J.1    Shen, G.-D.2    Guo, W.-L.3
  • 2
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    • Novel semiconductor laser with dual-wavelength cascaded by tunnel junction
    • Chinese source
    • LI Jian-jun, SHEN Guang-di, GUO Wei-ling, et al. Novel semiconductor laser with dual-wavelength cascaded by tunnel junction[J]. Chinese Journal of Lasers, 2003, 30(11): 961-964. (in Chinese)
    • (2003) Chinese Journal of Lasers , vol.30 , Issue.11 , pp. 961-964
    • Li, J.-J.1    Shen, G.-D.2    Guo, W.-L.3
  • 3
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    • Lu Tien-chang, Fu Richard, Shieh H M, et al. Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers[J]. Applied Physics Letters, 2001, 78(7): 853-855.
    • (2001) Applied Physics Letters , vol.78 , Issue.7 , pp. 853-855
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  • 4
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    • The measurement and study of the optical and thermal characteristics of laser diode by electrical method
    • Chinese source, Beijing: Beijing University of Technology
    • Feng Shiwei. The Measurement and study of the optical and thermal characteristics of laser diode by electrical method[D]. Beijing: Beijing University of Technology, 1998. 6-7. (in Chinese)
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  • 5
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    • Temperature distributions in the GaAs-AlGaAs double-heterostructure laser below and above the threshold current
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    • Transient temperature response of vertical-cavity surface-emitting semiconductor lasers
    • Zhao Y G, Mclnerney J G. Transient temperature response of vertical-cavity surface-emitting semiconductor lasers[J]. IEEE J of Q E, 1995, 31(9): 1668-1673.
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  • 7
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    • Transient thermal effects calculation in InP/InGaAsP stripe geometry semiconductor laser diode
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    • Zhang Xiaobo, Gao Dingsan. Transient thermal effects calculation in InP/InGaAsP stripe geometry semiconductor laser diode[J]. Chinese J Semiconductors, 1989, 10(5): 362-367. (in Chinese)
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  • 8
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.