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Volumn 30, Issue 11, 2003, Pages 961-964

Novel semiconductor laser with dual-wavelength cascaded by tunnel junction

Author keywords

Laser technique; MOCVD; Multi wavelength; Semiconductor laser

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS; STRUCTURAL DESIGN; TUNNEL JUNCTIONS;

EID: 1642402861     PISSN: 02587025     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (6)
  • 1
    • 1642329896 scopus 로고
    • CW multiwavelength transverse-junction-stripe lasers grown by molecular beam epitaxy operating predominantly in single-longitudinal modes
    • W. T. Tsang. CW multiwavelength transverse-junction-stripe lasers grown by molecular beam epitaxy operating predominantly in single-longitudinal modes [J]. Appl. Phys. Lett., 1980, 36(6): 441-443
    • (1980) Appl. Phys. Lett. , vol.36 , Issue.6 , pp. 441-443
    • Tsang, W.T.1
  • 2
    • 0347608383 scopus 로고    scopus 로고
    • Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers
    • Tien-chang Lu, Richard Fu, H. M. Shieh et al.. Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers [J]. Appl. Phys. Lett., 2001, 78(7): 853-855
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.7 , pp. 853-855
    • Lu, T.-C.1    Fu, R.2    Shieh, H.M.3
  • 3
    • 0027681260 scopus 로고
    • Infrared AlGaAs and visible AlGaInP laser-diode stack
    • D. P. Bour, D. W. Treat, K. J. Beernink. Infrared AlGaAs and visible AlGaInP laser-diode stack [J]. Electron. Lett., 1993, 29(21): 1855-1856
    • (1993) Electron. Lett. , vol.29 , Issue.21 , pp. 1855-1856
    • Bour, D.P.1    Treat, D.W.2    Beernink, K.J.3
  • 4
    • 0026821268 scopus 로고
    • Individually addressable, high power singlemode laser diodes operating at 0.8, 0.85, and 0.92 μm
    • J. S. Major, Jun., D. F. Welch et al.. Individually addressable, high power singlemode laser diodes operating at 0.8, 0.85, and 0.92 μm [J]. Electron. Lett., 1992, 28(4): 391-393
    • (1992) Electron. Lett. , vol.28 , Issue.4 , pp. 391-393
    • Major, J.S.1    Jun2    Welch, D.F.3
  • 6
    • 0033880091 scopus 로고    scopus 로고
    • Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures
    • E. Herbert Li. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures [J]. Physica E, 2000, 5: 215-273
    • (2000) Physica E , vol.5 , pp. 215-273
    • Li, E.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.