Electrical properties of Bi-doped PbTe layers grown by molecular beam epitaxy on BaF2 substrates

Brazilian Journal of Physics

Volumn 34, Issue 2 B, 2004, Pages 653-655

  Dos Anjos, A M P ^a   Abramof, E ^a   Rappl, P H O ^a   Ueta, A Y ^a   Closs, H ^a  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4344601667     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: 10.1590/s0103-97332004000400033     Document Type: Conference Paper

References (5)

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3. C. Boschetti, P.H.O Rappl, A.Y. Ueta, and I.N. Bandeira, Infrared Phys. 34, 281 (1993).
4. A. Prinz, G. Springholz, A.Y. Ueta, and G. Bauer, Phys. Rev. B 59, 12983 (1999).
5. G. Springholz, G. Bauer, and G. Ihninger, J. Cryst. Growth 127, 302 (1993).