Overview of spin transport electronics in metals

Proceedings of the IEEE

Volumn 91, Issue 5, 2003, Pages 652-660

  Johnson, Mark ^a,b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

Magnetic random access memory (MRAM); Magnetoelectronics; Random access memory (RAM); Spin electronics; Spin injection; Spin relaxation; Spintronics

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRONIC EQUIPMENT; ELECTRONS; MAGNETOELECTRIC EFFECTS; RANDOM ACCESS STORAGE; RELAXATION PROCESSES;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETOELECTRONICS; RANDOM ACCESS MEMORY (RAM); SPIN ELECTRONICS; SPIN INJECTION; SPIN RELAXATION; SPINTRONICS;

ELECTROMAGNETISM;

EID: 4344587344     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2003.811808     Document Type: Review

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