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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3548-3551

Control of carrier concentration in n-Type hot-pressed Bi 1.8Sb0.2Te3 alloys

(7) Im, Hee Joong a Kim, Dong Hwan a Ahn, Jeung Sun a Iwasaki, Hideo a Sano, Seijirou a,b Je, Koo Chul a,c Mitani, Tadaoki a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b Advanced Research Department (Japan)

c Inha University (South Korea)

Author keywords

Annealing method; Antisite defects; Figure of merit; N type hot pressed Bi2 xSb xTe3 alloy; Type transition

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COMPOSITION; DIFFUSION; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; HOT PRESSING; MECHANICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEEBECK EFFECT;

ANTISITE DEFECTS; FIGURE OF MERIT; N-TYPE HOT PRESSED; THERMOELECTRIC PROPERTIES; TYPE TRANSITION;

BISMUTH ALLOYS;

EID: 4344578888 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.3548 Document Type: Article

Times cited : (7)

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