Highly efficient n-(Bi, Sb)2Te3 thermoelectric materials for temperatures below 200 K

Semiconductors

Volumn 34, Issue 4, 2000, Pages 376-380

  Kutasov, V A ^a   Luk'yanova, L N ^a   Konstantinov, P P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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[No Author keywords available]

Indexed keywords

EID: 0034165014     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187991     Document Type: Article

References (16)

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