Determination of band offsets in strained-Si heterolayers

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 80-84

  Maiti, C K ^a   Samanta, S K ^a   Chatterjee, S ^a   Dalapati, G K ^a   Bhattacharya, S ^b   Armstrong, B M ^b   Gamble, H S ^b   McCarthy, J ^c   Perova, T S ^c   Moore, R A ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^c TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

Band offset; LPCVD; MOS capacitor; Relaxed SiGe; Strained Si

Indexed keywords

BAND OFFSET; RELAXED-SIGE; STRAINED-SI;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 4344564986     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.026     Document Type: Article

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