Finite size effects in stress analysis of interconnect structures

Applied Physics Letters

Volumn 85, Issue 5, 2004, Pages 724-726

  Noyan, I C ^a   Murray, Conal E ^a   Chey, Jay S ^a   Goldsmith, Charles C ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC ANALYSIS; FILM STRESS; THERMOMECHANICAL ANALYSIS; THIN FILM STRUCTURES;

ANNEALING; COOLING; ELASTIC MODULI; PHASE EQUILIBRIA; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; TRANSIENTS; X RAY DIFFRACTION ANALYSIS;

THERMAL STRESS;

EID: 4344564636     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1776331     Document Type: Article

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14. xx on the material properties and geometry. In the application of the S-L model to the experimental stress measurements, we use a two-dimensional solution that incorporates the effects of bending within the thin film and substrate system. Details of this formulation can be found in Murray and Noyan (Ref. 8).
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16. This effect would have been represented by a decrease in the slip proportionality coefficient, R, if the DI model were used.
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