Decomposition difficulty analysis for double patterning and the impact on photomask manufacturability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6925, Issue , 2008, Pages

  Inazuki, Yuichi ^a   Toyama, Nobuhito ^b   Nagai, Takaharu ^a   Sutou, Takanori ^a   Morikawa, Yasutaka ^a   Mohri, Hiroshi ^a   Hayashi, Naoya ^a   Drapeau, Martin ^c   Lucas, Kevin ^c   Cork, Chris ^c  

^a DAI NIPPON PRINTING CO LTD   (Japan)

^b DNP Corporation USA   (United States)

^c SYNOPSYS INC   (United States)

Author keywords

Decomposition; Double patterning; Mask error enhancement factor; Photomask inspection

Indexed keywords

COMPUTER SOFTWARE; NANOTECHNOLOGY; OPTICAL RESOLVING POWER; SPECIFICATIONS;

DOUBLE PATTERNING; MASK ERROR ENHANCEMENT FACTOR; PHOTOMASK INSPECTION; SPLIT-CONFLICT;

LITHOGRAPHY;

EID: 43249118691     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.773291     Document Type: Conference Paper

References (6)

1. itrs2006 : public.itrs.net or etc.
2. M. Dusa, et. al. "Pitch Doubling Through Dual Patterning Lithography Challenges in Integration and Litho Budgets", Proc. of SPIE, Vol. 6520 (2007)
3. J. Klerk, et al, "Performance of a 1.35NA ArF immersion lithography system for 40nm applications", Proc. of SPIE, Vol.6520 (2007)
4. J. Park, et al, "Application Challenges with Double Patterning Technology (DPT) beyond 45nm", Proc. of SPIE, Vol.6349 (2006)
5. T. Adachi, et al, "45-32nm node photomask technology with water immersion lithography", Proc. of SPIE, Vol. 6349 (2006)
6. K. Lucas, et al, "Patterning control budgets for the 32nm generation incorporating lithography, design and RET variations", Proc. of SPIE, Vol. 6520 (2007)