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Volumn 6925, Issue , 2008, Pages

APF® pitch-halving for 22nm logic cells using gridded design rules

Author keywords

Advanced patterning film; APF; Double patterning; GDR; Gridded design rules; Restricted design rules; SADP; SaDPT; Spacer mask

Indexed keywords

DIELECTRIC MATERIALS; FREQUENCY DOUBLERS; LOGIC DESIGN; MASKS; PATTERN MATCHING;

EID: 43249083986     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772905     Document Type: Conference Paper
Times cited : (35)

References (10)
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  • 2
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  • 3
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    • Haffher, H.1
  • 4
    • 43249108349 scopus 로고    scopus 로고
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    • US Patent 6924191
    • W. Lie et al, "Method for fabricating a gate structure of a field effect transistor," US Patent 6924191, 2005.
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  • 8
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  • 9
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    • Double pattern and etch of poly with hard mask,
    • U.S. Patent 6787469
    • T. Houston et al, "Double pattern and etch of poly with hard mask," U.S. Patent 6787469, 2004.
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  • 10
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    • Cell-based aerial image analysis of design styles for 45 nanometer generation logic
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    • M. Smayling et al, "Cell-based aerial image analysis of design styles for 45 nanometer generation logic," SPIE Microlithography 2007, San José, USA.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.