Fabrication and characterization of GaAs/AlGaAs lateral quantum dot developed by ultrasonic agitation

Semiconductor Science and Technology

Volumn 23, Issue 5, 2008, Pages

  Yang, Q Z ^a,b   Jones, G A C ^a   Kelly, M J ^a,b   Beere, H ^a   Farrer, I ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRASONIC WAVES;

SINGLE QUANTUM DOTS; ULTRASONIC AGITATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 43149099225     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/5/055018     Document Type: Article

References (11)

1. Sohn L L, Kouwenhoven L P and Schon G 1997 Advanced Study Institute on Mesoscopic Electron Transport (Dordrecht: Kluwer)
2. Reimann S M and Manninen M 2002 Rev. Mod. Phys. 74 1283
3. Greenwich J S 1980 Electron Beam Technology in Microelectronic Fabrication ed G R Brewer (New York: Academic)
4. Lee K L 1997 J. Vac. Sci. Technol. B 15 2621
5. Iwamoto T 1994 Japan. J. Appl. Phys. Lett. 33 491
6. Yasin S, Hasko D G and Ahmed H 1999 J. Vac. Sci. Technol. 17 3390
7. Dobisz E A, Brandow S L, Bass R and Mitterender J 2000 J. Vac. Sci. Technol. B 8 107
8. Yang Q Z, Farrer I, Beere H, Jones G A C and Kelly M J 2008 Semicond. Sci. Technol. submitted
9. Chen M and Porod W 1995 J. Appl. Phys. 78 1050
10. Snyder G L, Tan I H and Hu E L 1990 J. Appl. Phys. 68 5922
11. Snyder G L, Miller M S, Rooks M J and Hu E L 1991 Appl. Phys. Lett. 59 2727