An ion track based approach to nano- and micro-electronics

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1642-1646

  Hoppe, K ^a   Fahrner, W R ^b   Fink, D ^c   Dhamodoran, S ^d   Petrov, A ^e   Chandra, A ^f   Saad, A ^g   Faupel, F ^h   Chakravadhanula, V S K ^h   Zaporotchenko, V ^h  

^a South Westfalia University of Applied Sciences   (Germany)

^b UNIVERSITY OF HAGEN   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

^d UNIVERSITY OF HYDERABAD   (India)

^e INSTITUTE FOR MATHEMATICS   (Belarus)

^f UNIVERSITY OF DELHI   (India)

^g AL BALQA APPLIED UNIVERSITY   (Jordan)

^h UNIVERSITY OF KIEL   (Germany)

Author keywords

Amplification; Electronics; Ion tracks; Negative differential resistance; Network theory; TEMPOS

Indexed keywords

CIRCUIT THEORY; ELECTRIC CURRENTS; NANOCLUSTERS; NANOPORES; NEGATIVE RESISTANCE; PARTICLE BEAM DYNAMICS;

ION TRACKS; NEGATIVE DIFFERENTIAL RESISTANCE; NEGATIVE DIFFERENTIAL RESISTANCES (NDR);

ION SOURCES;

EID: 43049163800     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.12.069     Document Type: Article

References (23)

1. For an overview, see: D. Fink (Ed.), Transport Processes in Ion Irradiated Polymers, Springer Series in Materials Science, Vol. 65, 2004, ISBN 3-540-20943-3.
2. see, e.g.:. Chen J., and Könenkamp R. Vertical nano-wire transistor in flexible polymer foil. Appl. Phys. Lett. 82 (2003) 4782
3. Fink D., and Klett R. Latent ion tracks in polymers for future use in nanoelectronics: an overview of the present state-of-the-art. Braz. J. Phys. 25 (1995) 54
4. Fink D., and Chadderton L.T. Ion-solid interaction: status and perspectives. Braz. J. Phys. 35 (2005) 1
5. Fink D., Chadderton L.T., Hoppe K., Fahrner W.R., Chandra A., and Kiv A. Swift-heavy ion track electronics (SITE). Nucl. Instr. and Meth. B 261 (2007) 727
6. Siwy Z.S., Powell M.R., Kalman E., Astumian R.D., and Eisenberg R.S. Negative incremental resistance induced by calcium in asymmetric nanopores. Nano Lett. 6 3 (2006) 473
7. Z. Siwy, J. Behrends, N. Fertig, A. Fulinski, C.R. Martin, R. Neumann, C. Trautmann, E.T. Molares, Nanovorrichtung für einen geladenen Teilchenfluss und Verfahren zu deren Herstellung, German Patent DE 10244914A1 (5.6.2004).
8. D. Fink, A. Chandra, A. Saad, W.R. Fahrner, K. Hoppe, P. Alegaonkar, A. Berdinsky, D. Grasser, R. Lorenz, Ion track-based electronic elements, in: Proceedings of the 18th International Conference on Ion-Surface Interactions, Zvenigorod, Russia, 2007.
9. D. Fink, Novel Ion Track-Based Electronic Structures - An Overview, ISL-Information, HMI Berlin, May 2005, p. 2.
10. Fink D., Petrov A., Hoppe H., Fahrner W.R., Papaleo R.M., Berdinsky A., Chandra A., Biswas A., and Chadderton L.T. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection channels for novel electronic structures. Nucl. Instr. and Meth. B 218 (2004) 355
11. Fink D., Petrov A., Fahrner W.R., Hoppe K., Papaleo R.M., Berdinsky A., Chandra A., Zrineh A., and Chadderton L.T. Ion track based nanoelectronics. Int. J. Nanosci. 4 (2005) 965
12. Sinha D., Petrov A., Fink D., Fahrner W.R., Hoppe K., and Chandra A. TEMPOS structures with gold nanoclusters. Radiat. Eff. Defect Sol. 159 (2004) 517
13. D.Fink, A.Petrov, K.Hoppe, W.R.Fahrner, Characterization of TEMPOS: A New Tunable electronic material with pores in oxide on silicon, in: Lu-Min Wang, R. Fromknecht, L. Snead, D.F. Downey, H. Takahasi, (Eds.), Proceedings of MRS Fall Meeting, Boston, December 1-5, 2003, Vol. 792, R 7.9.
14. Richman P. Characteristics and Operation of MOS Field Effect Devices (1967), Mc Graw-Hill Inc., New York
15. K. Hoppe, W.R. Fahrner, D. Fink, Metallized nuclear tracks in quasi MOS structures for nanoelectronic devices, J. Electrochem. Soc., accepted for publication.
16. D. Fink, A. Kiv, V.Golovanov, J.Chen, A.Chandra, M. Ivanovskaya, L. Khirunenko, D. Fuks, Tin Dioxide as a Tuneable Electronically Anisotropic Material on Semiconductor, submitted for publication.
17. D. Fink, A. Kiv, M. Tabacnics, M.A. de Rizutto, A. de Oliveira Delgado Silva, J. Am. Inst. Phys., in press.
18. S. Dhamodaran, D. Fink, A. Saad, Application of network theory for the description of nanocluster distributions in ion track electronics, Radiat. Eff. Defect. Sol., in press.
19. Barabási A.-L., and Albert R. Emergence of scaling in random networks. Science 286 (1999) 509
20. V. Mancevski, System and Method for Fabricating Logic Devices Comprising Carbon Nanotube Transistors, US Patent US2001/0023986 A, September 27, 2001.
21. Berdinsky A.S., Alegaonkar P.S., Lee H.C., Jung J.S., Han J.H., Yoo J.B., Fink D., and Chadderton L.T. Growth of carbon nanotubes in etched tracks in silicon oxide on silicon. Nano 2 (2007) 59
22. Lee S.H., Alegaonkar P.S., Han J.H., Berdinsky A.S., Fink D., Kwon Y.-U., and Park C.Y. Carbon nanotubes growth in AlPO4-5 zeolithes: evidence for density-dependent field emission characteristics. Diam. Relat. Mater. 15 (2006) 1759
23. 2. J. Phys. D: Appl. Phys. 40 (2007) 3423