RBS study of Ti/ZnO interface

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1378-1381

  Rahman, A M A ^a   Narusawa, T ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

AFM; Annealing; Metallic contact; RBS; Single crystal ZnO; Ti thin film

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; PHASE STABILITY; SINGLE CRYSTALS; THIN FILMS; VACUUM DEPOSITION; ZINC OXIDE;

CHANNELING SPECTROSCOPY; INTERFACE STABILITY; INTERFACE STRUCTURE; METALLIC CONTACTS;

INTERFACES (MATERIALS);

EID: 43049159091     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.12.018     Document Type: Article

References (16)

1. VI Compounds (Russian translation), Mir, Moscow, 1970.
2. Schropp R.E.I., and Madan A. J. Appl. Phys. 66 5 (1989) 2027
3. Heideman R.G., Lambeck P.V., and Gardeniers J.G.E. Opt. Mater. 4 6 (1995) 741
4. Penza M., Martucci C., Anisimkin V.I., and Vasanelli L. Mater. Sci. Forum. 203 (1996) 137
5. Hutchins M.G.C. Energy and Environment Vol. 3 (1990), Pergamon, Oxford p. 1398
6. Purica M., Budianu E., and Rusu E. Microelectron. Eng. 51-52 1-4 (2000) 425
7. Huang M., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
8. Sang B., Yamada A., and Konagai M. Jpn. J. Appl. Phys. 37 2B (1998) L206
9. Ohmoto A., and Kawasaki M. IEICE Trans. Electron E83-C 10 (2000) 1614
10. Emanetoglu N.W., Gorla C., Liu Y., Liang S., and Lu Y. Mater. Sci. Semicond. Proc. 2 (1999) 247
11. Von Pressing F.J., Jeng H., and Kim E.S. Smart Mater. Struct. 7 (1998) 396
12. Martin P.M., Good M.S., Johnson J.W., Posakony G.J., Bond L.J., and Crawford S.L. Thin Solid Films 379 (2000) 253
13. Oral Abstract Presentation in France, 2006.
14. Barin I., Sauret F., Rohnhof E.S., and Sheng W.S. Thermochemical Data of Pure Substances (1989), VCH, NY
15. Monterio T., Soares M.J., Neves A., Oliveira M., Rita E., Wahl U., and Alves E. Phys. Stat. Sol. 1 2 (2004) 255
16. Kim S.Y., Jang H.W., Kim J.K., Jeon C.M., Park W.I., Yi G.C., and Lee J.L. J. Electron. Mater. 31 2 (2002) 869