Comparison of three un-cooled micro-bolometers configurations based on amorphous silicon-germanium thin films deposited by plasma

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2598-2602

  Moreno, M ^a   Kosarev, A ^a   Torres, A ^a   Ambrosio, R ^a  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

Author keywords

Amorphous semiconductors; Germanium; Sensors; Silicon

Indexed keywords

AMORPHOUS SEMICONDUCTORS; AMORPHOUS SILICON; CHEMICAL SENSORS; GERMANIUM; PLASMA DEPOSITION; THIN FILMS;

CURRENT-VOLTAGE CHARACTERISTICS; MICRO-BOLOMETERS; NOISE SPECTRAL DENSITY; THERMOSENSING FILM;

BOLOMETERS;

EID: 43049147951     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.116     Document Type: Article

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