Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

Materials Science and Engineering C

Volumn 26, Issue 2-3, 2006, Pages 177-180

  Zaghdoudi, M ^a   Abdelkrim, M M ^a   Fathallah, M ^a   Mohammed Brahim, T ^b   Rogel, R ^b  

^a UNIVERSITY OF TUNIS   (Tunisia)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Annealing; CPM; PDS; Polycrystalline silicon; Pressure

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DOPING (ADDITIVES); OPTICAL PROPERTIES; POLYSILICON; PRESSURE EFFECTS; THIN FILMS;

CPM; DEFECT DENSITY; PDS;

PHOSPHORUS;

EID: 32944469391     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2005.10.063     Document Type: Conference Paper

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